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| inchange semiconductor product specification silicon npn power transistors 2SD1588 description ? ? with to-220fa package ? complement to type 2sb1097 ? low speed switching applications ? for low frequency power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 7 a i cm collector current-peak 15 a i b base current 3.5 a t c =25 ?? 30 p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1588 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma , i b =0 60 v v cesat collector-emitter saturation voltage i c =5a; i b =0.5a 0.5 v v besat base-emitter saturation voltage i c =5a ;i b =0.5a 1.5 v i cbo collector cut-off current v cb =80v; i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe-1 dc current gain i c =3a ; v ce =1v 40 200 h fe-2 dc current gain i c =5a ; v ce =1v 20 ? h fe-1 classifications m l k 40-80 60-120 100-200 inchange semiconductor product specification 3 silicon npn power transistors 2SD1588 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm) |
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